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International Rectifier Electronic Components Datasheet

IRF5852 Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These N-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual TSOP-6 package is ideal for applications
where printed circuit board space is at a premium and
where maximum functionality is required. With two
die per package, the IRF5852 can provide the
functionality of two SOT-23 packages in a smaller
footprint. Its unique thermal design and RDS(on)
reduction enables an increase in current-handling
capability.
VDSS
20 V
PD - 93999
IRF5852
HEXFET® Power MOSFET
RDS(on) max (Ω)
0.090@VGS = 4.5V
0.120@VGS = 2.5V
ID
2.7A
2.2A
TSOP-6
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
2.7
2.2
11
0.96
0.62
7.7
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
130
Units
°C/W
1
3/1/01


International Rectifier Electronic Components Datasheet

IRF5852 Datasheet

Power MOSFET

No Preview Available !

IRF5852
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V
––– 0.016 ––– V/°C
––– ––– 0.090
––– ––– 0.120
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 2.7A ‚
VGS = 2.5V, ID = 2.2A ‚
0.60 ––– 1.25 V VDS = VGS, ID = 250µA
5.2 ––– ––– S VDS = 10V, ID = 2.7A
––– ––– 1.0
––– ––– 25
µA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = -12V
––– 4.0 6.0
ID = 2.7A
––– 0.95 ––– nC VDS = 16V
––– 0.88 –––
VGS = 4.5V ‚
––– 6.6 –––
VDD = 10V ‚
––– 1.2 ––– ns ID = 1.0A
––– 15 –––
RG = 6.2
––– 2.4 –––
VGS = 4.5V
––– 400 –––
––– 48 –––
VGS = 0V
pF VDS = 15V
––– 32 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 0.96
showing the
A
––– ––– 11
integral reverse
p-n junction diode.
G
––– –––
––– 25
––– 6.5
1.2
38
9.8
V TJ = 25°C, IS = 0.96A, VGS = 0V
ns TJ = 25°C, IF = 0.96A
nC di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
2 www.irf.com


Part Number IRF5852
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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