erating Area 120 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 90 ID = 250µA 60 1.5 30 0 25 50 75 100 125 150 1.0 -75 -50 -25 0 25 50 75 100 12.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package.

IRF6620

IRF6620PBF

IRF6621

IRF6621PbF

IRF6621TRPbF

IRF6622

IRF6622PBF

IRF6622TRPBF

IRF6623

IRF6623PBF

IRF6623TRPBF

IRF6626

IRF6626PbF