Description
The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.
Features
- ltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
60 50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
200
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 5.7A 8.7A BOTTOM 13A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
160
120
80
40
0 25 50 75 100 125.
IRF6633TRPBF Datasheet
