Datasheet Details
| Part number | IRF6691PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 660.69 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6691PBF Datasheet
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General Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Key Features
- , Reverse Drain Current (A) 100 100µsec 10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10 1msec 1 0.0 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 10msec 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 200 Fig10. Maximum Safe Operating Area 2.5 ID, Drain Current (A) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) VGS(th) Gate threshold Voltage (V) 175 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75.