V 4.0V 3.5V 3.0V 2.8V 2.5V ID, Drain-to-Source Current (A) 10 BOTTOM ID, Drain-to-Source Current (A) BOTTOM 1 10 0.1 2.5V ≤60µs PULSE WIDTH 0.01 0.1 1 Tj = 25°C 1.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is.

IRF6709S2TR1PbF

IRF6709S2TRPbF

IRF6702M2DTR1PbF

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IRF6706S2TR1PBF

IRF6706S2TRPBF

IRF6710S2

IRF6710S2TR1PbF

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IRF6712SPBF

IRF6712STRPBF