Datasheet Details
| Part number | IRF6720S2TR1PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 254.75 KB |
| Description | Power MOSFET |
| Datasheet | IRF6720S2TR1PBF_InternationalRectifier.pdf |
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Overview: PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS pliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling patible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application patible with existing Surface Mount Techniques 100% Rg tested Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 0.9nC VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qoss 5.1nC 30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V Qrr 14nC Vgs(th) 2.0V 7.
| Part number | IRF6720S2TR1PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 254.75 KB |
| Description | Power MOSFET |
| Datasheet | IRF6720S2TR1PBF_InternationalRectifier.pdf |
|
|
|
The IRF6720S2PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
| Part Number | Description |
|---|---|
| IRF6720S2TRPBF | Power MOSFET |
| IRF6721SPBF | Power MOSFET |
| IRF6721STRPBF | Power MOSFET |
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| IRF6722MTRPBF | Power MOSFET |
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| IRF6722STRPBF | Power MOSFET |
| IRF6723M2DTR1PBF | Power MOSFET |
| IRF6723M2DTRPBF | Power MOSFET |
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