Description
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- 25°C Tj = 150°C Single Pulse 0.0 0.1 1.0 10msec
100
10 TJ = 150°C TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1
0.01 10.0 100.0 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
140 120
ID, Drain Current (A)
100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0 -75 -50 -25 0 25 50 75 1.
IRF6728MTRPBF Datasheet
