IRF7104 Datasheet - International Rectifier

HEXFET Power MOSFET

IRF7104 Features

* oshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

IRF7104 General Description

l l S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = -20V RDS(on) = 0.250Ω ID = -2.3A 3 4 6 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switc.

IRF7104 Datasheet (158.94 KB)

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IRF7104

Manufacturer:

International Rectifier

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158.94 KB

Description:

Hexfet power mosfet.
PD - 9.1096B IRF7104 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in.

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IRF7104 HEXFET Power MOSFET International Rectifier

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IRF7104 Features

IRF7104 General Description

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