IRF7106 Datasheet - International Rectifier

Power MOSFET

IRF7106 Features

* 0.20 10 0.10 0.05 0.02 1 PD M 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 N o te s: 1 . D u ty fa c to r D = t 1 / t 2 0.1 0.00001 2 . P e a k TJ = P D M x Z th J A + T A A 1000 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Effective Tr

IRF7106 General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the d.

IRF7106 Datasheet (158.66 KB)

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IRF7106

Manufacturer:

International Rectifier

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158.66 KB

Description:

Power mosfet.
PD - 9.1098B PRELIMINARY IRF7106 N-CHANNEL MOSFET 1 8 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel.

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IRF7106 Power MOSFET International Rectifier

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IRF7106 Features

IRF7106 General Description

Datasheet Details

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