IRF7341QPbF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF7341QPbF
Manufacturer	International Rectifier
File Size	209.69 KB
Description	Power MOSFET
Datasheet	IRF7341QPbF Datasheet
Additional preview pages of the IRF7341QPbF datasheet.

Product details

Description

These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Features

of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

📁 Similar Datasheet

IRF734 - Power MOSFET (Vishay)
IRF7342 - Power MOSFET (Infineon)
IRF7342PbF - Power MOSFET (Infineon)
IRF7342TR - Dual P-Channel MOSFET (UMW)
IRF7342TRPBF - Dual P-Channel MOSFET (VBsemi)
IRF7343TRPBF - Dual N+P-Channel Enhancement Mode MOSFET (HUAXUANYANG)
IRF730 - PowerMOS transistor (NXP)
IRF730A - Power MOSFET (Vishay)

Other Datasheets by International Rectifier

IRF7341Q - HEXFET Power MOSFET
IRF7341 - HEXFET Power MOSFET
IRF7341GPBF - Power MOSFET
IRF7341PBF - HEXFET Power MOSFET
IRF7342D2 - MOSFET & Schottky Diode
IRF7342D2PBF - MOSFET & Schottky Diode

Published: Dec 28, 2015 |