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International Rectifier Electronic Components Datasheet

IRF7341QPbF Datasheet

Power MOSFET

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Benefits
Advanced Process Technology
ÿDual N-Channel MOSFET
ÿUltra Low On-Resistance
ÿ175°C Operating Temperature
ÿRepetitive Avalanche Allowed up to Tjmax
ÿLead-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET’s are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
PD - 96108A
IRF7341QPbF
HEXFET® Power MOSFET
VDSS
55V
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
EAS
IAR
EAR
TJ , TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient ƒ
www.irf.com
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
°C/W
1
08/03/10


International Rectifier Electronic Components Datasheet

IRF7341QPbF Datasheet

Power MOSFET

No Preview Available !

IRF7341QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.043 0.050
––– 0.056 0.065
VGS = 10V, ID = 5.1A ‚
VGS = 4.5V, ID = 4.42A ‚
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance
10.4 ––– ––– S VDS = 10V, ID = 5.2A
IDSS Drain-to-Source Leakage Current
––– ––– 2.0
––– ––– 25
µA
VDS = 44V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Qg Total Gate Charge
––– 29 44
ID = 5.2A
Qgs Gate-to-Source Charge
––– 2.9 4.4 nC VDS = 44V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 7.3 11
––– 9.2 –––
VGS = 10V
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 7.7 –––
––– 31 –––
ns
ID = 1.0A
RG = 6.0
tf Fall Time
––– 12.5 –––
VGS = 10V ‚
Ciss Input Capacitance
––– 780 –––
VGS = 0V
Coss
Output Capacitance
––– 190 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 66 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 2.4
––– ––– 42
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 2.6A, VGS = 0V ‚
––– 51 77 ns TJ = 25°C, IF = 2.6A
––– 76 114 nC di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
2
ƒ Surface mounted on FR-4 board, t 10sec.
www.irf.com


Part Number IRF7341QPbF
Description Power MOSFET
Maker International Rectifier
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