IRF7341QPbF Datasheet | International Rectifier

HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. - 96108A IRF7341QPb F HEXFET® Power MOSFET VDSS 55V RDS(on) max 0.050@VGS = 10V 0.065@VGS = 4.5V 5.1A 4.42A S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation- Maximum Power Dissipation- Linear Derating Factor EAS IAR EAR TJ , TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Junction and Storage Temperature Range Thermal Resistance Parameter Max. RθJA Maximum Junction-to-Ambient - .irf. Max. 55 5.1 4.2 42 2.4 1.7 16 ± 20 140 5.1 See Fig. 14, 15, 16 -55 to +...