IRF7342 mosfet equivalent, power mosfet.
0.0 0 (1 2 .9 9 2 ) M AX .
1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabil.
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VDSS = -55V RDS(on) = 0.105Ω
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b.
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