IRF7342 Datasheet | Specifications & PDF Download

UMW IRF7342TR Dual P-Channel MOSFET 1.Description The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and

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PD- 94101A IRF7342D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applica

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 Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast S

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PD- 95299 IRF7342D2PbF Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET® l Low VF Schot

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PD - 97640 AUTOMOTIVE GRADE ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dual P-Channel MOSFET Dynamic dV/dT Rating 150°C Operati

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 Generation V Technology  Ultra Low On-Resistance  Dual P Channel MOSFET  Surface Mount  Available in Tape & Reel  Dynamic dv/dt Rating  Fast S

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VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -55 0.105 26 -3.4 V Ω nC A IRF7342TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8

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PD - 96109 IRF7342QPbF O O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & R

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PD - 95200 IRF7342PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic

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IRF7342TRPBF IRF7342TRPBF Datasheet www.VBsemi.com Dual P-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.059 at VGS = -

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PD -91859 IRF7342 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape &

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  AUTOMOTIVE GRADE AUIRF7342Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual P Channel MOSFET  Dynamic

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