IRF7343QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 55
P-Ch -55
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
0.059
0.054
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
0.043 0.050
0.056 0.065
0.095 0.105
0.150 0.170
Ω
VGS = 10V, ID = 4.7A
VGS = 4.5V, ID = 3.8A
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
N-Ch 1.0
P-Ch -1.0
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 7.9
P-Ch 3.3
S
VDS = 10V, ID = 4.5A
VDS = -10V, ID = -3.1A
N-Ch 2.0
VDS = 55V, VGS = 0V
P-Ch
N-Ch
-2.0
25
µA
VDS = -55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 55°C
P-Ch -25
VDS = -55V, VGS = 0V, TJ = 55°C
N-P ±100 nA VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
24 36
26 38
2.3 3.4
3.0 4.5
7.0 10
8.4 13
nC
N-Channel
ID = 4.5A, VDS = 44V, VGS = 10V
P-Channel
ID = -3.1A, VDS = -44V, VGS = -10V
N-Ch 8.3 12
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14 22
3.2 4.8
10 15
32 48
43 64
13 20
22 32
ns
N-Channel
VDD = 28V, ID = 1.0A, RG = 6.0Ω,
RD = 28Ω
P-Channel
VDD = -28V, ID = -1.0A, RG = 6.0Ω,
RD = 28Ω
N-Ch 740
N-Channel
P-Ch 690
VGS = 0V, VDS = 25V, = 1.0MHz
N-Ch 190 pF
P-Ch 210
P-Channel
N-Ch 71
VGS = 0V, VDS = -25V, = 1.0MHz
P-Ch 86
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch 2.0
IS
Continuous Source Current (Body Diode)
P-Ch -2.0 A
N-Ch 38
ISM
Pulsed Source Current (Body Diode)
P-Ch -27
VSD Diode Forward Voltage
N-Ch 0.70 1.2
P-Ch -0.80 -1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IS = -2.0A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
60 90
54 80
120 170
85 130
ns
nC
N-Channel
TJ = 25°C, IF =2.0A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -2.0A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.
P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.
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