IRF7343QPbF Datasheet | International Rectifier

Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch G1 2 S2 3 7 D1 VDSS 55V -55V 6 D2 G2 4 5 D2 P-CHANNEL MOSFET RDS(on) 0.050Ω 0.105Ω Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS IAR EAR VGS dv/dt TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation … Maximum Power Dissipation … Single Pulse Avalanche Energy- Avalanche Current Repetitive Avalanche Energy Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Thermal Resistance RθJA .irf. Parameter Maximum Junction-to-Ambient … Max. N-Channel P-Channel 55 -55 4.7 -3.4 3.8 -2.7 38 -27 72 114 4.7 -3.4 ± 20 5.0...