IRF8306MPBF Datasheet | International Rectifier

Description The IRF8306MPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8306MPb F balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPb F has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) Orderable part number IRF8306MTRPb F IRF8306MTR1Pb F Package Type Direct FET MX Direct FET MX Standard Pack Form Quantity Tape and Reel Tape and Reel Note "TR" suffix "TR1" suffix EOL notice # 264 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Parameter Drain-to-Source Voltage Gate-to-Source Voltage e Continuous Drain Current, VGS @ 10V e Continuous Drain Current, VGS @ 10V f Continuous Drain Current, VGS @ 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current ID = 23A 14.0 12.0 ID= 18A Max. 30 ±20 23 18 140 180 230 18 VDS= 24V VDS= 15V VDS= 6V Units V A m J A 4 TJ =...