IRF8306MPBF Description
The IRF8306MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application...
IRF8306MPBF Key Features
- RoHS pliant Containing No Lead and Halogen Free Typical values (unless otherwise specified)
- Integrated Monolithic Schottky Diode
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V Qg tot Qgd
- Ideal for CPU Core DC-DC Converters
- Optimized for Sync. FET socket of Sync. Buck Converter
- Low Conduction and Switching Losses