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International Rectifier Electronic Components Datasheet

IRF8306MPBF Datasheet

Power MOSFET

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IRF8306MPBF pdf
IRF8306MPbF
HEXFET® Power MOSFET plus Schottky Diode ‚
l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching 
25nC 6.7nC 3.0nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
G
D
S
SD
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Orderable part number
IRF8306MTRPbF
IRF8306MTR1PbF
Package Type
DirectFET MX
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
10
8
6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
ID = 23A
14.0
12.0 ID= 18A
10.0
8.0
Max.
30
±20
23
18
140
180
230
18
VDS= 24V
VDS= 15V
VDS= 6V
Units
V
A
mJ
A
4 TJ = 125°C
2 TJ = 25°C
0
2468
10 12 14 16 18 20
6.0
4.0
2.0
0.0
0
20 40 60 80
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 7, 2014


International Rectifier Electronic Components Datasheet

IRF8306MPBF Datasheet

Power MOSFET

No Preview Available !

IRF8306MPBF pdf
IRF8306MPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
61
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
2.7
1.8
2.8
1.8
-4.8
–––
–––
–––
–––
–––
25
7.3
3.0
6.7
8.0
9.7
22
1.3
16
34
19
19
4110
970
340
Typ.
–––
–––
0.7
21
29
Max. Units
Conditions
–––
–––
2.5
3.6
2.35
–––
500
5.0
100
-100
–––
V VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 6mA
imΩ VGS = 10V, ID = 23A
iVGS = 4.5V, ID = 18A
V VDS = VGS, ID = 100μA
mV/°C VDS = VGS, ID = 10mA
μA VDS = 24V, VGS = 0V
mA VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 18A
38
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 18A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
Ãi––– Ω
––– VDD = 15V, VGS = 4.5V
––– ns ID = 18A
––– RG = 1.8Ω
––– See Fig. 17
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
23 MOSFET symbol
D
A showing the
180
integral reverse
G
0.75
p-n junction diode.
S
iV TJ = 25°C, IS = 18A, VGS = 0V
i32 ns TJ = 25°C, IF = 18A
44 nC di/dt = 300A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 7, 2014


Part Number IRF8306MPBF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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