The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
IRF8306MPbF
HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching
25nC 6.7nC 3.0nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques
G D
S SD
l 100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.
IRF8306MPBF Datasheet
