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IRF8306MPBF - Power MOSFET

IRF8306MPBF Description

IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values (unless otherwise specif.
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

IRF8306MPBF Features

* Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014 IRF8306MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) 1000 100 10 TJ = 150°C 1 TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1

IRF8306MPBF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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