IRF8306MPBF Datasheet - International Rectifier

Power MOSFET

IRF8306MPBF Features

* Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014 IRF8306MPbF ISD, Reverse Drain Current (A) ID, Drain Current (A) 1000 100 10 TJ = 150°C 1 TJ = 25°C TJ = -40°C VGS = 0V 0.1 0.0 0.2 0.4 0.6 0.8 1

IRF8306MPBF General Description

The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries use.

IRF8306MPBF Datasheet (280.06 KB)

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IRF8306MPBF

Manufacturer:

International Rectifier

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280.06 KB

Description:

Power mosfet.
IRF8306MPbF HEXFET® Power MOSFET plus Schottky Diode l RoHS Compliant Containing No Lead and Halogen Free Typical values (unless otherwise specif.

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IRF8306MPBF Power MOSFET International Rectifier

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IRF8306MPBF Features

IRF8306MPBF General Description

Datasheet Details

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