The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
1
VGS = 0V 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
250
200
150
Typical VGS(th) Gate threshold Voltage (V)
ID, Drain-to-Source Current (A)
1000 100.
IRF8327SPbF
l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested
DirectFET® Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
9.2nC 3.0nC 1.2nC 19nC 7.9nC 1.9V
SQ
DirectFET® ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.
IRF8327SPBF Datasheet
