) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N N O TE S : 1 . CO NTR O LL IN G DIM EN S IO N : M ILL IM E TE R. 2 . A LL D IM E NS IO NS AR E S HO W N IN M IL.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabil.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

IRF9952

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IRF9956

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IRF9130

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