IRF9956 mosfet equivalent, power mosfet.
HEXFET® Power MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
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VDSS = 30V RDS(on) = 0.10Ω
Re.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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