IRFP2410 Datasheet - International Rectifier

Fourth Generation MOSFET

IRFP2410 Features

* 5 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat B

IRFP2410 General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the de.

IRFP2410 Datasheet (147.83 KB)

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IRFP2410

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International Rectifier

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147.83 KB

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Fourth generation mosfet.
Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive.

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IRFP2410 Fourth Generation MOSFET International Rectifier

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IRFP2410 General Description

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