IRG4BC30UD Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recov

IRG4BC30UD

International Rectifier

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Insulated gate bipolar transistor.

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