IRG4BC30U-S Datasheet - International Rectifier

INSULATED GATE BIPOLAR TRANSISTOR

* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard D2Pak package C UltraFast Speed IGBT VC

IRG4BC30U-S

International Rectifier

308.23 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRG4BC30U INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FPBF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

Image Gallery