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IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30FD Description

PD -91451B IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4BC30FD Features

* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recove

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Datasheet Details

Part number
IRG4BC30FD
Manufacturer
International Rectifier
File Size
412.65 KB
Datasheet
IRG4BC30FD_InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC30FD-like datasheet