IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recove

IRG4BC30FD

International Rectifier

412.65 KB

Insulated gate bipolar transistor.

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