IRG4BC30FPBF - Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4BC30FPBF
Manufacturer	International Rectifier
File Size	244.18 KB
Description	Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30FPBF_InternationalRectifier.pdf

Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.

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Published: Jun 9, 2007 |