Part number:
IRG4BC30FD-S
Manufacturer:
International Rectifier
File Size:
1.25 MB
Description:
Insulated gate bipolar transistor.
* Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes f
IRG4BC30FD-S Datasheet (1.25 MB)
IRG4BC30FD-S
International Rectifier
1.25 MB
Insulated gate bipolar transistor.
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