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IRG4BC30FD-S - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG4BC30FD-S
Manufacturer	International Rectifier
File Size	1.25 MB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30FD-S_InternationalRectifier.pdf

IRG4BC30FD-S Product details

Features

Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with.

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Published: Aug 28, 2007 |