Datasheet4U Logo Datasheet4U.com

IRG4BC30FD-S

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30FD-S Features

* • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes f

IRG4BC30FD-S Datasheet (1.25 MB)

Preview of IRG4BC30FD-S PDF

Datasheet Details

Part number:

IRG4BC30FD-S

Manufacturer:

International Rectifier

File Size:

1.25 MB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FD1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30FPBF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30K-S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30K-SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

Image Gallery

IRG4BC30FD-S Datasheet Preview Page 2 IRG4BC30FD-S Datasheet Preview Page 3

IRG4BC30FD-S Distributor