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IRG4BC30F

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30F Features

* Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-220AB package C Fast Speed IGBT VCES

IRG4BC30F Datasheet (167.27 KB)

Preview of IRG4BC30F PDF

Datasheet Details

Part number:

IRG4BC30F

Manufacturer:

International Rectifier

File Size:

167.27 KB

Description:

Insulated gate bipolar transistor.

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IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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