Part number:
IRG4BC30FD1
Manufacturer:
International Rectifier
File Size:
387.31 KB
Description:
Insulated gate bipolar transistor.
* Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics.
IRG4BC30FD1 Datasheet (387.31 KB)
IRG4BC30FD1
International Rectifier
387.31 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30FDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30F INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30FPBF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30K-S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30K-SPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRG4BC30KD-S INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)