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IRG4BC30FD1

INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC30FD1 Features

* • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. •

IRG4BC30FD1 Datasheet (387.31 KB)

Preview of IRG4BC30FD1 PDF

Datasheet Details

Part number:

IRG4BC30FD1

Manufacturer:

International Rectifier

File Size:

387.31 KB

Description:

Insulated gate bipolar transistor.

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IRG4BC30FD1 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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