IRG4BC30FD1 - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4BC30FD1
Manufacturer	International Rectifier
File Size	387.31 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30FD1_InternationalRectifier.pdf

Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. Industry standard TO-220AB package. G E VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for s.

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Published: Jun 5, 2007 |