IRG4BC30U - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4BC30U
Manufacturer	International Rectifier
File Size	167.87 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30U_InternationalRectifier.pdf

UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for specified.

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Published: Jul 27, 2005 |