IRG4BC30U-S - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRG4BC30U-S
Manufacturer	International Rectifier
File Size	308.23 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30U-S_InternationalRectifier.pdf

UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
Industry standard D2Pak package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Jul 27, 2005 |