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IRG4IBC20FDPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRG4IBC20FDPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG4IBC20FDPBF
Manufacturer	International Rectifier (now Infineon)
File Size	292.27 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Download	IRG4IBC20FDPBF Download (PDF)

Overview

PD -94915A IRG4IBC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

C.
Very Low 1.66V votage drop.
2.5kV, 60s insulation voltage .
4.8 mm creapage distance to heatsink.
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 G kHz in resonant mode).
IGBT co-packaged with.

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