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IRG4IBC20UDPBF Datasheet

Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

IRG4IBC20UDPBF Overview

PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE.

IRG4IBC20UDPBF Key Features

  • 2.5kV, 60s insulation voltage …
  • 4.8 mm creapage distance to heatsink
  • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
  • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
  • Tighter parameter distribution
  • Industry standard Isolated TO-220 FullpakTM
  • Lead-Free
  • Simplified assembly
  • Highest efficiency and power density
  • HEXFREDTM antiparallel Diode minimizes

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