Datasheet Details
| Part number | IRG7PSH54K10DPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 827.59 KB |
| Description | Insulated Gate Bipolar Transistor |
| Datasheet |
 IRG7PSH54K10DPbF Datasheet
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Key Features
- Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode.