IRG7PSH50UDPbF Description
PD - 97548 IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRG7PSH50UDPbF Key Features
- Low VCE (ON) trench IGBT technology
- Low switching losses
- Square RBSOA
- 100% of the parts tested for ILM
- Positive VCE (ON) temperature co-efficient
- Ultra fast soft recovery co-pak diode
- Tight parameter distribution
- Lead-Free
IRG7PSH50UDPbF Applications
- Suitable for a wide range of switching frequencies due to
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation