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IRG7PSH50UDPbF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG7PSH50UDPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PSH50UDPbF

Datasheet Details

Part number	IRG7PSH50UDPbF
Manufacturer	International Rectifier
File Size	380.42 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PSH50UDPbF Datasheet
Additional preview pages of the IRG7PSH50UDPbF datasheet.

IRG7PSH50UDPbF Product details

Features

Low VCE (ON) trench IGBT technology.
Low switching losses C.
Square RBSOA.
100% of the parts tested for ILM .
Positive VCE (ON) temperature co-efficient.
Ultra fast soft recovery co-pak diode G.
Tight parameter distribution.
Lead-Free Benefits E n-channel.
High efficiency in a wide range of.

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Published: Mar 8, 2016 |