Full PDF Text Transcription for IRG7PSH73K10PbF (Reference)
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IRG7PSH73K10PbF. For precise diagrams, and layout, please refer to the original PDF.
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 μS short Circuit SOA • ...
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ses • Maximum Junction Temperature 175 °C • 10 μS short Circuit SOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (ON) Temperature Coefficient • Tight Parameter Distribution • Lead Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation PD - 97406A IRG7PSH73K10PbF C G E n-channel VCES = 1200V IC(Nominal) = 75A tSC ≥ 10μs, TJ(max) =175°C VCE(on) typ. = 2.
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IRG7PSH73K10PbF Datasheet
