IRG7PSH73K10PbF Description
INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PSH73K10PbF Key Features
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 10 μS short Circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
IRG7PSH73K10PbF Applications
- Suitable for a Wide Range of Switching Frequencies due to
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation