IRG7PSH73K10PbF
IRG7PSH73K10PbF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Low VCE (ON) Trench IGBT Technology
- Low Switching Losses
- Maximum Junction Temperature 175 °C
- 10 μS short Circuit SOA
- Square RBSOA
- 100% of The Parts Tested for ILM
- Positive VCE (ON) Temperature Coefficient
- Tight Parameter Distribution
- Lead Free Package
Benefits
- High Efficiency in a Wide Range of Applications
- Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation
- 97406A
G E n-channel
VCES = 1200V IC(Nominal) = 75A tSC ≥ 10μs, TJ(max) =175°C VCE(on) typ. =...
