IRG7PSH54K10DPbF Overview
IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 50A G E C C G E Applications Industrial Motor Drive UPS Solar Inverters Welding n-channel G Gate C Collector IRG7PSH54K10DPbF E Emitter.