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IRG7PSH54K10DPbF - Insulated Gate Bipolar Transistor

Product Overview

International Rectifier

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IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PSH54K10DPbF

Datasheet Details

Part number	IRG7PSH54K10DPbF
Manufacturer	International Rectifier
File Size	827.59 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRG7PSH54K10DPbF Datasheet
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IRG7PSH54K10DPbF Product details

Features

Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V  Diode.

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Published: Jun 14, 2013 |