IRG7PSH54K10DPbF
IRG7PSH54K10DPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 50A
Applications
- Industrial Motor Drive
- UPS
- Solar Inverters
- Welding n-channel
G Gate C Collector
IRG7PSH54K10DPbF E Emitter
Features
Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PSH54K10DPbF...
