IRGP4066PBF Key Features
- Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Squa
- Part: IRGP4066PBF
- Manufacturer: International Rectifier (official site)
- Size: 285.75 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRGP4066-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4066D | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4066D-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4066DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGP4062-EPBF | INSULATED GATE BIPOLAR TRANSISTOR |
IRGP4066PBF Description
PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR.
IRGP4066PBF Applications
- Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
- Rugged Transient Performance for Increased Reliability
- Excellent Current Sharing in Parallel Operation