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IRGP4066PBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGP4066PBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP4066PBF
Manufacturer	International Rectifier (now Infineon)
File Size	285.75 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4066PBF Datasheet

Overview

PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package IRGP4066PbF IRGP4066-EPbF C VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.7V Benefits.
High Efficienc.

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