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IRGP4760D-EPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4760D-EPbF, a member of the IRGP4760DPbF Insulated Gate Bipolar Transistor family.

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E GC IRGP4760DPbF  TO‐247AC  C Collector E GC IRGP4760D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of.

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Full PDF Text Transcription

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  VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.
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