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IRGP6660DPBF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

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IRGP6660DPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP6660DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	654.02 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP6660DPBF Datasheet

Overview

VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

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