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IRGP6690D-EPbF - Insulated Gate Bipolar Transistor

Download the IRGP6690D-EPbF datasheet PDF. This datasheet also covers the IRGP6690DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP6690DPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP6690DPbF Insulated Gate Bipolar Transistor
IRGP6630D-EPbF Insulated Gate Bipolar Transistor
IRGP6630DPbF Insulated Gate Bipolar Transistor
IRGP6650D-EPbF Insulated Gate Bipolar Transistor
IRGP6650DPBF Insulated Gate Bipolar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.