Download IRGP6690DPbF Datasheet PDF
International Rectifier
IRGP6690DPbF
IRGP6690DPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Features Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, Ro HS pliant Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly Base part number IRGP6690DPBF IRGP6690D-EPBF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP6690DPBF IRGP6690D-EPBF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C IC @ TC = 100°C Continuous Collector Current Continuous Collector Current ICM Pulse Collector Current, VGE = 15V ILM Clamped Inductive Load Current, VGE = 20V  IFRM @ TC = 100°C Diode Repetitive Peak Forward Current-  IFM Diode Maximum Forward Current - VGE Continuous Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 140 90 225 300 45 300 ±20 483 241 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Thermal Resistance Parameter...