IRGP6690DPbF
IRGP6690DPbF is Insulated Gate Bipolar Transistor manufactured by International Rectifier.
Features
Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, Ro HS pliant
Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved reliability due to rugged hard switching performance and higher power capability
Enables short circuit protection scheme Excellent current sharing in parallel operation Environmentally friendly
Base part number
IRGP6690DPBF IRGP6690D-EPBF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
Orderable Part Number
IRGP6690DPBF IRGP6690D-EPBF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C IC @ TC = 100°C
Continuous Collector Current Continuous Collector Current
ICM Pulse Collector Current, VGE = 15V
ILM Clamped Inductive Load Current, VGE = 20V IFRM @ TC = 100°C Diode Repetitive Peak Forward Current-
IFM Diode Maximum Forward Current
- VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C
TJ TSTG
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max. 600 140 90 225 300 45 300 ±20 483 241 -40 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m)
Thermal Resistance
Parameter...