IRGP6690D-EPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.

Download the IRGP6690D-EPbF datasheet PDF. This datasheet also includes the IRGP6690DPbF variant, as both parts are published together in a single manufacturer document.

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IRGP6690D-EPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP6690D-EPbF
Manufacturer	International Rectifier (now Infineon)
File Size	637.51 KB
Description	Insulated Gate Bipolar Transistor
Download	IRGP6690D-EPbF Download (PDF)

Key Features

Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of.

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