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IRGP6690D-EPbF

Manufacturer: International Rectifier (now Infineon)

IRGP6690D-EPbF datasheet by International Rectifier (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRGP6690D-EPbF datasheet preview

IRGP6690D-EPbF Datasheet Details

Part number IRGP6690D-EPbF
Datasheet IRGP6690D-EPbF IRGP6690DPbF Datasheet (PDF)
File Size 637.51 KB
Manufacturer International Rectifier (now Infineon)
Description Insulated Gate Bipolar Transistor
IRGP6690D-EPbF page 2 IRGP6690D-EPbF page 3

IRGP6690D-EPbF Overview

VCES = 600V IC = 90A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 75A Applications Welding H Bridge Converters IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CC C G E n-channel G Gate GCE IRGP6690DPbF TO-247AC C Collector E GC IRGP6690D-EPbF TO-247AD E Emitter.

International Rectifier (now Infineon) logo - Manufacturer

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IRGP6690D-EPbF Distributor

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