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IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

The IRGS4056DPbF by International Rectifier is a INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

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IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Official preview page of the IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR datasheet (International Rectifier).

Datasheet Details

Part number	IRGS4056DPbF
Manufacturer	International Rectifier
File Size	400.62 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGS4056DPbF-InternationalRectifier.pdf
Additional preview pages of the IRGS4056DPbF datasheet.

IRGS4056DPbF Product details

Features

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 µS short circuit SOA.
Square RBSOA.
100% of the parts tested for 4X rated current (ILM).
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode.
Tight parameter distribution.
Lead Free Package C G E n-channel Benefits.
High Efficiency in a wide range of.

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Published: May 4, 2015 |