IRGS4062DPBF - Power MOSFET

International Rectifier

Datasheet Details

Part number	IRGS4062DPBF
Manufacturer	International Rectifier
File Size	484.73 KB
Description	Power MOSFET
Datasheet	IRGS4062DPBF-InternationalRectifier.pdf

Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGS4062DPbF IRGSL4062DPbF VCES = 600V IC = 24A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 1.

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Published: Apr 22, 2014 |