IRGS4B60KD1 Key Features
- Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatu
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Part: IRGS4B60KD1
- Manufacturer: International Rectifier (official site)
- Size: 437.61 KB
Related International Rectifier Datasheets
| Part Number | Description |
|---|---|
| IRGS4B60KD1PBF | Insulated Gate Bipolar Transistor |
| IRGS4B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS4045DPBF | Insulated Gate Bipolar Transistor |
| IRGS4055PBF | PDP Trench IGBT |
| IRGS4056DPbF | INSULATED GATE BIPOLAR TRANSISTOR |
IRGS4B60KD1 Description
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.