IRGS4B60KD1 - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Download the IRGS4B60KD1 datasheet PDF. This datasheet also includes the IRGB4B60KD1PBF variant, as both parts are published together in a single manufacturer document.

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IRGS4B60KD1 insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB4B60KD1PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGS4B60KD1
Manufacturer	International Rectifier (now Infineon)
File Size	437.61 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGS4B60KD1 Datasheet

Overview

PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transien.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGS4B60KD1PBF	Insulated Gate Bipolar Transistor
IRGS4B60KPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGS4045DPBF	Insulated Gate Bipolar Transistor
IRGS4055PBF	PDP Trench IGBT
IRGS4056DPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGS4062DPBF	Power MOSFET
IRGS4064DPBF	Power MOSFET
IRGS4065PBF	IGBT
IRGS4086PbF	PDP Trench IGBT
IRGS4607DPBF	Insulated Gate Bipolar Transistor