Datasheet4U Logo Datasheet4U.com

IRL2910L - Power MOSFET

This page provides the datasheet information for the IRL2910L, a member of the IRL2910S Power MOSFET family.

Description

extremely low on-resistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRL2910L

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching G l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package.
Published: |