Datasheet4U Logo Datasheet4U.com

IRL3803VPBF - HEXFET Power MOSFET

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C TO-220AB package is not recommended for Surface Mount.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL3803V N-Channel MOSFET INCHANGE
IRL3803VS N-Channel MOSFET INCHANGE
IRL3803 N-Channel MOSFET INCHANGE
IRL3803PBF MOSFET Infineon
IRL3103 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3803V Power MOSFET
IRL3803VL Power MOSFET
IRL3803VLPbF Power MOSFET
IRL3803VS Power MOSFET
IRL3803VSPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95955 IRL3803VPbF HEXFET® Power MOSFET l Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 30V RDS(on) = 5.5mΩ G S ID = 140A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.