SI4435DYPBF Datasheet - International Rectifier

HEXFET Power MOSFET

SI4435DYPBF General Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 .

SI4435DYPBF Datasheet (143.28 KB)

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SI4435DYPBF

Manufacturer:

International Rectifier

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143.28 KB

Description:

Hexfet power mosfet.
www.DataSheet4U.com PD- 95133 Si4435DYPbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape &.

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SI4435DYPBF HEXFET Power MOSFET International Rectifier

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SI4435DYPBF General Description

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