SI4435DYPBF Datasheet | International Rectifier

l Ultra Low On-Resistance l P-Channel MOSFET S l Surface Mount S l Available in Tape & Reel l Lead-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. PD- 95133 Si4435DYPb F HEXFET® Power MOSFET VDSS = -30V 5 D RDS(on) = 0.020Ω Top...