Si4420DY
Si4420DY is Power MOSFET manufactured by International Rectifier.
Description
This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800m W in typical board mount applications.
HEXFET® Power MOSFET
AA 1 8D 2 7D 3 6D 4 5D
Top View
VDSS = 30V RDS(on) = 0.009Ω
SO-8
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
EAS VGS TJ, TSTG
Parameter Drain- Source Voltage
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
- Power Dissipation
- Linear Derating Factor Single Pulse Avalanche Energy- Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
.irf.
Parameter Maximum Junction-to-Ambient-
Max. 30
±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150
Max. 50
Units V
W W/°C m J V °C
Units °C/W
1/3/2000
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
- -
- -
- - V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
-...
