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International Rectifier Electronic Components Datasheet

Si4420DY Datasheet

Power MOSFET

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PD - 93835
Si4420DY
l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
S
S
S
G
Description
This N-channel HEXFET® power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET
AA
1 8D
2 7D
3 6D
4 5D
Top View
VDSS = 30V
RDS(on) = 0.009
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
30
±12.5
±10
±50
2.5
1.6
0.02
400
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
1/3/2000


International Rectifier Electronic Components Datasheet

Si4420DY Datasheet

Power MOSFET

No Preview Available !

Si4420DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.009
––– ––– 0.013
VGS = 10V, ID = 12.5A ‚
VGS = 4.5V, ID = 10.5A ‚
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance
––– 29 ––– S VDS = 15V, ID = 12.5A
IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 5.0
µA
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg Total Gate Charge
––– 52 78
ID = 12.5A
Qgs Gate-to-Source Charge
––– 8.7 ––– nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge
––– 12 –––
VGS = 10V, See Fig. 6 ‚
td(on)
Turn-On Delay Time
––– 15 –––
VDD = 15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 10 ––– ns ID = 1.0A
––– 55 –––
RG = 6.0
tf Fall Time
––– 47 –––
RD = 15, ‚
Ciss Input Capacitance
––– 2240 –––
VGS = 0V
Coss Output Capacitance
––– 1100 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance
––– 150 –––
ƒ = 1.0MHz, See Fig. 5‚
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Diode Conduction)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
52
Max.
2.3
50
1.1
78
Units
A
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 2.3A, VGS = 0V ‚
TJ = 25°C, IF = 2.3A
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ When mounted on FR4 Board, t 10 sec
„ Starting TJ = 25°C, L = 13mH
RG = 25, IAS = 8.9A. (See Figure 15)
2
www.irf.com


Part Number Si4420DY
Description Power MOSFET
Maker International Rectifier
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Si4420DY Datasheet PDF






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