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20N60C3 - N-Channel IGBT

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Overview

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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