20N60C3
Key Features
- 45A, 600V, TC = 25oC
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
- Short Circuit Rating
- Low Conduction Loss
- Part: 20N60C3
- Description: N-Channel IGBT
- Manufacturer: Intersil
- Size: 81.68 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 20N60C3 | Infineon | Power Transistor |
| 20N60C2 | Infineon | Power Transistor |
| 20N60CFD | Infineon | Cool MOS Power Transistor |
| 20N60C5 | IXYS | Power MOSFET |
| 20N60 | Unisonic Technologies | 600V N-CHANNEL POWER MOSFET |
| 20N60 | ROUM | 20A 600V N-channel Enhancement Mode Power MOSFET |
| 20N60S5 | Infineon | Power Transistor |
| 20N60A4D | onsemi | N-Channel IGBT |
| 20N60D | ROUM | 20A 600V N-channel Enhancement Mode Power MOSFET |
| 20N60S1 | Fuji Electric | N-Channel enhancement mode power MOSFET |