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Intersil Electronic Components Datasheet

BUZ42 Datasheet

N-Channel Power MOSFET

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Semiconductor
Data Sheet
BUZ42
October 1998 File Number 2417.1
4A, 500V, 2.000 Ohm, N-Channel Power
Features
[ /Title
(BUZ42
)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 4A, 500V
• rDS(ON) = 2.000
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(4A,
transistors requiring high speed and low gate drive power.
500V, This type can be operated directly from integrated circuits.
2.000 Formerly developmental type TA17415.
Ohm, N-
Channel Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
Power
MOS-
PART NUMBER
PACKAGE
BUZ42
TO-220AB
BRAND
BUZ42
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
FET)
NOTE: When ordering, use the entire part number.
Symbol
/Author
()
D
/Key-
words
G
(Harris
Semi-
S
conduc-
tor, N-
Channel Packaging
Power
MOS-
JEDEC TO-220AB
FET,
TO-
220AB)
SOURCE
DRAIN
GATE
/Creator
()
DRAIN (FLANGE)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
Outlines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

BUZ42 Datasheet

N-Channel Power MOSFET

No Preview Available !

BUZ42
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ42
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
500
4.0
16
±20
75
300
0.6
-55 to 150
E
V
V
A
A
V
W
mJ
W/oC
oC
-
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
-
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
500 - - V
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 500V, VGS = 0V
TJ = 125oC, VDS = 500V, VGS = 0V
2.1 3
4
- 20 250
- 100 1000
V
µA
µA
IGSS VGS = 20V, VDS = 0V
- 10 100 nA
rDS(ON) ID = 2.5A, VGS = 10V (Figure 8)
-
1.6 2.000
gfs VDS = 25V, ID = 2.5A (Figure 11)
1.5 2.5
-
S
td(ON) VCC = 30V, ID 2.5A, VGS = 10V, RGS = 50Ω,
-
30
45
tr RL = 10. (Figures 16, 17)
- 40 60
ns
ns
td(OFF)
- 110 140
ns
tf
- 50 65
ns
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
- 1500 2000 pF
COSS
- 110 170 pF
CRSS
RθJC
RθJA
- 40 70 pF
1.67
oC/W
75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
VSD
trr
QRR
TC = 25oC
TC = 25oC
TJ = 25oC, ISD = 8A, VGS = 0V
TJ = 25oC, ISD = 4A, dISD/dt = 100A/µs,
VR = 100V
- - 4.0
- - 16
- 1.1 1.5
- 1200 -
- 6.0 -
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 25µH, RG = 25, IPEAK = 4.5A. (See Figures 14 and 15).
UNITS
A
A
V
ns
µC
2


Part Number BUZ42
Description N-Channel Power MOSFET
Maker Intersil Corporation
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BUZ42 Datasheet PDF






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