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Intersil Electronic Components Datasheet

BUZ45B Datasheet

N-Channel Power MOSFET

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Semiconductor
Data Sheet
BUZ45B
October 1998 File Number 2259.1
10A, 500V, 0.500 Ohm, N-Channel Power
Features
[ /Title
(BUZ45
B)
/Subject
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
• 10A, 500V
• rDS(ON) = 0.500
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
(10A, transistors requiring high speed and low gate drive power.
500V, This type can be operated directly from integrated circuits.
0.500 Formerly developmental type TA17435.
Ohm, N-
Channel Ordering Information
Power
PART NUMBER
PACKAGE
BRAND
MOS- BUZ45B
TO-204AA
BUZ45B
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
D
FET)
NOTE: When ordering, use the entire part number.
/Author
G
()
/Key-
S
words
(Harris
Semi- Packaging
conduc-
tor, N-
JEDEC TO-204AA
Channel
Power
MOS-
FET,
DRAIN
(FLANGE)
TO-
204AA)
/Creator
SOURCE (PIN 2)
() GATE (PIN 1)
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

BUZ45B Datasheet

N-Channel Power MOSFET

No Preview Available !

BUZ45B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ45B
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
500
10
40
±20
125
1.0
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 500V, VGS = 0V
TJ = 125oC, VDS = 500V, VGS = 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IGSS VGS = 20V, VDS = 0V
rDS(ON) ID = 5A, VGS = 10V (Figure 8)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
gfs
td(ON)
tr
VDS = 25V, ID = 5A (Figure 11)
VCC = 30V, ID 2.9A, VGS = 10V,
RGS = 50Ω, RL = 10. (Figures 14, 15)
Turn-Off Delay Time
td(OFF)
Fall Time
Input Capacitance
Output Capacitance
tf
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CRSS
RθJC
RθJA
Source to Drain Diode Specifications
MIN TYP MAX UNITS
500 - - V
2.1 3 4 V
- 20 250 µA
- 100 1000 µA
- 10 100 nA
- 0.49 0.50
2.7 5 - S
- 50 75
ns
- 80 120 ns
- 330 430
ns
- 110 140
ns
- 3800 4900
pF
- 250 400
pF
- 100 170
pF
1 oC/W
35
oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
ISD TC = 25oC
- - 10
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISDM
VSD
trr
QRR
TJ = 25oC, ISD = 20A, VGS = 0V
TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs,
VR = 100V
- - 40
- 1.3 1.7
- 1200 -
- 12 -
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2


Part Number BUZ45B
Description N-Channel Power MOSFET
Maker Intersil Corporation
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BUZ45B Datasheet PDF






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