BUZ45B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ45B
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
500
10
40
±20
125
1.0
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 500V, VGS = 0V
TJ = 125oC, VDS = 500V, VGS = 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IGSS VGS = 20V, VDS = 0V
rDS(ON) ID = 5A, VGS = 10V (Figure 8)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
gfs
td(ON)
tr
VDS = 25V, ID = 5A (Figure 11)
VCC = 30V, ID ≈ 2.9A, VGS = 10V,
RGS = 50Ω, RL = 10Ω. (Figures 14, 15)
Turn-Off Delay Time
td(OFF)
Fall Time
Input Capacitance
Output Capacitance
tf
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CRSS
RθJC
RθJA
Source to Drain Diode Specifications
MIN TYP MAX UNITS
500 - - V
2.1 3 4 V
- 20 250 µA
- 100 1000 µA
- 10 100 nA
- 0.49 0.50
Ω
2.7 5 - S
- 50 75
ns
- 80 120 ns
- 330 430
ns
- 110 140
ns
- 3800 4900
pF
- 250 400
pF
- 100 170
pF
≤ 1 oC/W
≤ 35
oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
ISD TC = 25oC
- - 10
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISDM
VSD
trr
QRR
TJ = 25oC, ISD = 20A, VGS = 0V
TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs,
VR = 100V
- - 40
- 1.3 1.7
- 1200 -
- 12 -
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2
