BUZ76A
Key Features
- 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub
- Linear Transfer Characteristics (2.6A, This type can be operated directly from integrated circuits
- High Input Impedance 400V, Formerly developmental type TA17404
